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Technical Specifications
Parameters and characteristics for this part
| Specification | APT30M61SLLG/TR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 54 A |
| Drain to Source Voltage (Vdss) | 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D3PAK (2 Leads + Tab), TO-268AA, TO-268-3 |
| Power Dissipation (Max) | 403 W |
| Rds On (Max) @ Id, Vgs | 61 mOhm |
| Supplier Device Package | D3PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
MOSFET-300V Series
300V MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | 115 nC | SOT-227-4 miniBLOC | ISOTOP® | 300 V | N-Channel | 5 V | 76 A | 36 mOhm | Chassis Mount | 6480 pF | MOSFET (Metal Oxide) | |||||||||
 Microchip Technology | 975 nC | SOT-227-4 miniBLOC | ISOTOP® | 300 V | N-Channel | 4 V | 130 A | 19 mOhm | Chassis Mount | MOSFET (Metal Oxide) | 10 V | 30 V | -55 °C | 150 °C | 700 W | 21600 pF | ||||
 Microchip Technology | TO-247-3 | TO-247 [B] | 300 V | N-Channel | 48 A | Through Hole | MOSFET (Metal Oxide) | 10 V | 30 V | -55 °C | 150 °C | 370 W | 5870 pF | 70 mOhm | 225 nC | |||||
Microchip Technology | SOT-227-4 miniBLOC | ISOTOP® | 300 V | N-Channel | 5 V | 88 A | Chassis Mount | MOSFET (Metal Oxide) | 7030 pF | 140 nC | ||||||||||
Microchip Technology | 425 nC | SOT-227-4 miniBLOC | ISOTOP® | 300 V | N-Channel | 4 V | 70 A | Chassis Mount | MOSFET (Metal Oxide) | 10 V | 30 V | -55 °C | 150 °C | 10200 pF | 40 mOhm | 450 W | ||||
Microchip Technology | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | D3PAK | 300 V | N-Channel | 54 A | Surface Mount | MOSFET (Metal Oxide) | 10 V | 30 V | -55 °C | 150 °C | 3720 pF | 61 mOhm | 64 nC | 403 W | |||||
Microchip Technology | TO-247-3 | TO-247 [B] | 300 V | N-Channel | 85 mOhm | Through Hole | 4950 pF | MOSFET (Metal Oxide) | 10 V | 30 V | -55 °C | 150 °C | 300 W | 195 nC | ||||||
 Microchip Technology | 975 nC | SOT-227-4 miniBLOC | ISOTOP® | 300 V | N-Channel | 4 V | 130 A | 19 mOhm | Chassis Mount | MOSFET (Metal Oxide) | 10 V | 30 V | -55 °C | 150 °C | 700 W | 21600 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 16.10 | |
| Digi-Reel® | 1 | $ 16.10 | ||
| Tape & Reel (TR) | 400 | $ 13.07 | ||
| Microchip Direct | TAPE&REEL | 1 | $ 16.10 | |
| 100 | $ 13.90 | |||
| 250 | $ 13.38 | |||
| 500 | $ 13.08 | |||
| 1000 | $ 12.77 | |||
| 5000 | $ 12.34 | |||
Description
General part information
MOSFET-300V Series
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
Documents
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