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FDS86242
Discrete Semiconductor Products

FDS86140

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 100V, 11.2A, 9.8MΩ

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FDS86242
Discrete Semiconductor Products

FDS86140

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 100V, 11.2A, 9.8MΩ

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Technical Specifications

Parameters and characteristics for this part

SpecificationFDS86140
Current - Continuous Drain (Id) @ 25°C11.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]41 nC
Input Capacitance (Ciss) (Max) @ Vds2580 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W, 5 W
Rds On (Max) @ Id, Vgs9.8 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.81
10$ 2.50
100$ 1.76
500$ 1.44
1000$ 1.34
Digi-Reel® 1$ 3.81
10$ 2.50
100$ 1.76
500$ 1.44
1000$ 1.34
Tape & Reel (TR) 2500$ 1.31
NewarkEach (Supplied on Full Reel) 1$ 1.77
3000$ 1.66
6000$ 1.58
12000$ 1.42
18000$ 1.37
30000$ 1.32
ON SemiconductorN/A 1$ 1.21

Description

General part information

FDS86240 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and bodydiode reverse recovery performance.