Zenode.ai Logo
Beta
8-SOIC
Discrete Semiconductor Products

FDS86240

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 7.5A, 19.8MΩ

Deep-Dive with AI

Search across all available documentation for this part.

8-SOIC
Discrete Semiconductor Products

FDS86240

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 7.5A, 19.8MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS86240
Current - Continuous Drain (Id) @ 25°C7.5 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds2570 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W, 5 W
Rds On (Max) @ Id, Vgs19.8 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.77
10$ 2.48
100$ 1.74
500$ 1.42
1000$ 1.32
Digi-Reel® 1$ 3.77
10$ 2.48
100$ 1.74
500$ 1.42
1000$ 1.32
Tape & Reel (TR) 2500$ 1.29
NewarkEach 1$ 2.88
10$ 2.25
25$ 2.24
50$ 1.93
100$ 1.63
250$ 1.50
500$ 1.36
ON SemiconductorN/A 1$ 1.19

Description

General part information

FDS86240 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and bodydiode reverse recovery performance.