Specification	FDS86540

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	6410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W, 5 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDS86240 Series

N-Channel PowerTrench® MOSFET 150V, 7.5A, 19.8mΩ

Part	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS86540	Surface Mount	2.5 W 5 W	6410 pF	N-Channel	18 A	4.5 mOhm	4 V	8 V 10 V	-55 °C	150 °C	60 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	90 nC	8-SOIC
ON Semiconductor FDS86141	Surface Mount	2.5 W	934 pF	N-Channel	7 A	23 mOhm	4 V	6 V 10 V	-55 °C	150 °C	100 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	16.5 nC	8-SOIC
ON Semiconductor FDS8690	Surface Mount	2.5 W	1680 pF	N-Channel	14 A	7.6 mOhm	3 V	4.5 V 10 V	-55 °C	150 °C	30 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	27 nC	8-SOIC
ON Semiconductor FDS8670	Surface Mount	2.5 W	4040 pF	N-Channel	21 A		3 V	4.5 V 10 V	-55 °C	150 °C	30 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	82 nC	8-SOIC	3.7 mOhm
ON Semiconductor FDS86540	Surface Mount	2.5 W 5 W	6410 pF	N-Channel	18 A	4.5 mOhm	4 V	8 V 10 V	-55 °C	150 °C	60 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	90 nC	8-SOIC
ON Semiconductor FDS86240	Surface Mount	2.5 W 5 W	2570 pF	N-Channel	7.5 A	19.8 mOhm	4 V	6 V 10 V	-55 °C	150 °C	150 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	40 nC	8-SOIC
ON Semiconductor FDS86140	Surface Mount	2.5 W 5 W	2580 pF	N-Channel	11.2 A	9.8 mOhm	4 V	6 V 10 V	-55 °C	150 °C	100 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	41 nC	8-SOIC
ON Semiconductor FDS8638	Surface Mount	2.5 W	5680 pF	N-Channel	18 A	4.3 mOhm	3 V	4.5 V 10 V	-55 °C	150 °C	40 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	20 V	86 nC	8-SOIC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.18
		1	$ 4.18
		10	$ 2.75
		10	$ 2.75
		100	$ 1.94
		100	$ 1.94
		500	$ 1.60
		500	$ 1.60
		1000	$ 1.49
		1000	$ 1.49
	Digi-Reel®	1	$ 4.18
		1	$ 4.18
		10	$ 2.75
		10	$ 2.75
		100	$ 1.94
		100	$ 1.94
		500	$ 1.60
		500	$ 1.60
		1000	$ 1.49
		1000	$ 1.49
	Tape & Reel (TR)	2500	$ 1.48
		2500	$ 1.48
Newark	Each (Supplied on Full Reel)	1	$ 2.00
		3000	$ 1.88
		6000	$ 1.79
		12000	$ 1.61
		18000	$ 1.55
		30000	$ 1.49
ON Semiconductor	N/A	1	$ 1.37

Description

General part information

FDS86240 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and bodydiode reverse recovery performance.

Documents

Technical documentation and resources

FDS86540

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Technical Specifications

FDS86240 Series

Pricing

Description

FDS86240 Series

Documents

Technical Data Sheet EN

Product Change Notice EN

Package Drawing-751EB-SOIC8

Datasheet

FDS86240 Series