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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3442 |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 6 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 36.91 | |
| Microchip Direct | N/A | 1 | $ 39.75 | |
| Newark | Each | 1 | $ 2.14 | |
| 100 | $ 36.91 | |||
| 100 | $ 1.73 | |||
| 250 | $ 1.56 | |||
| 500 | $ 35.49 | |||
| 500 | $ 1.44 | |||
| 1000 | $ 1.33 | |||
Description
General part information
JANTXV2N3442-Transistor Series
This specification covers the performance requirements for NPN silicon, high-power 2N3442 transistor. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/370.The device package style is TO-204AA (formerly TO-3).
Documents
Technical documentation and resources
