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JANTX2N3442
Discrete Semiconductor Products

JANTX2N3442

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Microchip Technology

NPN SILICON HIGH-POWER 140V, 10A

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Documents2N3442
JANTX2N3442
Discrete Semiconductor Products

JANTX2N3442

Active
Microchip Technology

NPN SILICON HIGH-POWER 140V, 10A

Deep-Dive with AI

Documents2N3442

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N3442
DC Current Gain (hFE) (Min) @ Ic, Vce20
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-3, TO-204AA
Power - Max [Max]6 W
QualificationMIL-PRF-19500/307
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max)140 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 359.63
Microchip DirectN/A 1$ 387.30

Description

General part information

JANTXV2N3442-Transistor Series

This specification covers the performance requirements for NPN silicon, high-power 2N3442 transistor. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/370.The device package style is TO-204AA (formerly TO-3).

Documents

Technical documentation and resources