Specification	R6030KNZ4C13

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2350 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	305 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

R6030 Series

600V 30A TO-220FM, PrestoMOS™ with integrated high-speed diode

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor R6030JNZC8	150 °C	-55 °C	30 A	N-Channel	93 W	30 V	143 mOhm	7 V	600 V	TO-3PF	74 nC	TO-3P-3 Full Pack	2500 pF	15 V	MOSFET (Metal Oxide)	Through Hole
Rohm Semiconductor R6030JNZC17			30 A	N-Channel	93 W	30 V	143 mOhm	7 V	600 V	TO-3PF	74 nC	TO-3P-3 Full Pack	2500 pF	15 V	MOSFET (Metal Oxide)	Through Hole	150 °C
Rohm Semiconductor R6030ENZC17			30 A	N-Channel	120 W	20 V	130 mOhm		600 V	TO-3PF	85 nC	TO-3P-3 Full Pack	2100 pF	10 V	MOSFET (Metal Oxide)	Through Hole	150 °C
Rohm Semiconductor R6030KNZ4C13			30 A	N-Channel	305 W	20 V	130 mOhm	5 V	600 V	TO-247		TO-247-3	2350 pF	10 V	MOSFET (Metal Oxide)	Through Hole	150 °C	56 nC
Rohm Semiconductor R6030KNZC17			30 A	N-Channel	86 W	20 V	130 mOhm	5 V	600 V	TO-3PF		TO-3P-3 Full Pack	2350 pF	10 V	MOSFET (Metal Oxide)	Through Hole	150 °C	56 nC
Rohm Semiconductor R6030JNXC7G			30 A	N-Channel	95 W	30 V	143 mOhm	7 V	600 V	TO-220FM	74 nC	TO-220-3 Full Pack	2500 pF	15 V	MOSFET (Metal Oxide)	Through Hole	150 °C
Rohm Semiconductor R6030MNX	150 °C	-55 °C	30 A	N-Channel	90 W	30 V	150 mOhm	5 V	600 V	TO-220FM		TO-220-3 Full Pack		10 V	MOSFET (Metal Oxide)	Through Hole		43 nC	2180 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	550	$ 7.35
	Tube	1	$ 7.48
		30	$ 4.38
		120	$ 3.85
Mouser	N/A	1	$ 8.72
		10	$ 4.80
		100	$ 4.17
		250	$ 3.85
		600	$ 3.84

Description

General part information

R6030 Series

R6030JNZ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Documents

Technical documentation and resources

Calculation of Power Dissipation in Switching Circuit

R6030KNZ4C13

Deep-Dive with AI

R6030KNZ4C13

Deep-Dive with AI

Technical Specifications

R6030 Series

Pricing

Description

R6030 Series

Documents

Technical Data Sheet EN

Compliance of the RoHS directive

Method for Monitoring Switching Waveform

Moisture Sensitivity Level - Transistors

Calculation of Power Dissipation in Switching Circuit

MOSFET Gate Drive Current Setting for Motor Driving

How to Use the Thermal Resistance and Thermal Characteristics Parameters

How to Use LTspice&reg; Models

What Is Thermal Design

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Measurement Method and Usage of Thermal Resistance RthJC

PCB Layout Thermal Design Guide

List of Transistor Package Thermal Resistance

Notes for Temperature Measurement Using Thermocouples

Types and Features of Transistors

Anti-Whisker formation - Transistors

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Impedance Characteristics of Bypass Capacitor

What is a Thermal Model? (Transistor)

Two-Resistor Model for Thermal Simulation

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

About Flammability of Materials

Part Explanation

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Basics of Thermal Resistance and Heat Dissipation

How to Create Symbols for PSpice Models

Report of SVHC under REACH Regulation

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Importance of Probe Calibration When Measuring Power: Deskew

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Package Dimensions

Temperature derating method for Safe Operating Area (SOA)

How to Use LTspice&reg; Models: Tips for Improving Convergence

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

MOSFET Gate Resistor Setting for Motor Driving

Precautions When Measuring the Rear of the Package with a Thermocouple

R6030KNZ4 ESD Data

Judgment Criteria of Thermal Evaluation

Explanation for Marking

About Export Regulations

Notes for Calculating Power Consumption:Static Operation

R6030 Series

How to Use LTspice® Models

How to Use LTspice® Models: Tips for Improving Convergence