Specification	R6030MNX

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

R6030 Series

600V 30A TO-220FM, PrestoMOS™ with integrated high-speed diode

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor R6030JNZC8	150 °C	-55 °C	30 A	N-Channel	93 W	30 V	143 mOhm	7 V	600 V	TO-3PF	74 nC	TO-3P-3 Full Pack	2500 pF	15 V	MOSFET (Metal Oxide)	Through Hole
Rohm Semiconductor R6030JNZC17			30 A	N-Channel	93 W	30 V	143 mOhm	7 V	600 V	TO-3PF	74 nC	TO-3P-3 Full Pack	2500 pF	15 V	MOSFET (Metal Oxide)	Through Hole	150 °C
Rohm Semiconductor R6030ENZC17			30 A	N-Channel	120 W	20 V	130 mOhm		600 V	TO-3PF	85 nC	TO-3P-3 Full Pack	2100 pF	10 V	MOSFET (Metal Oxide)	Through Hole	150 °C
Rohm Semiconductor R6030KNZ4C13			30 A	N-Channel	305 W	20 V	130 mOhm	5 V	600 V	TO-247		TO-247-3	2350 pF	10 V	MOSFET (Metal Oxide)	Through Hole	150 °C	56 nC
Rohm Semiconductor R6030KNZC17			30 A	N-Channel	86 W	20 V	130 mOhm	5 V	600 V	TO-3PF		TO-3P-3 Full Pack	2350 pF	10 V	MOSFET (Metal Oxide)	Through Hole	150 °C	56 nC
Rohm Semiconductor R6030JNXC7G			30 A	N-Channel	95 W	30 V	143 mOhm	7 V	600 V	TO-220FM	74 nC	TO-220-3 Full Pack	2500 pF	15 V	MOSFET (Metal Oxide)	Through Hole	150 °C
Rohm Semiconductor R6030MNX	150 °C	-55 °C	30 A	N-Channel	90 W	30 V	150 mOhm	5 V	600 V	TO-220FM		TO-220-3 Full Pack		10 V	MOSFET (Metal Oxide)	Through Hole		43 nC	2180 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.91
Newark	Each	1	$ 4.53

Description

General part information

R6030 Series

R6030JNZ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

R6030MNX

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R6030MNX

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Technical Specifications

R6030 Series

Pricing

Description

R6030 Series

Documents

Transistor, MOSFET Flammability

TO220FM Inner Structure

TO-220FM Part Marking

R6030 Series