Discrete Semiconductor Products

R6030JNZC8

Obsolete

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR,

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Discrete Semiconductor Products

R6030JNZC8

Obsolete

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6030JNZC8

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	93 W
Rds On (Max) @ Id, Vgs	143 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	7 V

R6030KNZ4 Series

600V 30A TO-220FM, PrestoMOS™ with integrated high-speed diode

Part	Vgs (Max)	Package / Case	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Rohm Semiconductor R6030JNZC8	30 V	TO-3P-3 Full Pack	N-Channel	7 V	93 W	74 nC	143 mOhm	15 V	MOSFET (Metal Oxide)	30 A	Through Hole	600 V	TO-3PF	2500 pF	-55 °C	150 °C
Rohm Semiconductor R6030ENZC17	20 V	TO-3P-3 Full Pack	N-Channel		120 W	85 nC		10 V	MOSFET (Metal Oxide)	30 A	Through Hole	600 V	TO-3PF				2100 pF	150 °C	130 mOhm
Rohm Semiconductor R6030KNZ4C13	20 V	TO-247-3	N-Channel			56 nC		10 V	MOSFET (Metal Oxide)	30 A	Through Hole	600 V	TO-247				2350 pF	150 °C	130 mOhm	305 W
Rohm Semiconductor R6030JNXC7G	30 V	TO-220-3 Full Pack	N-Channel	7 V		74 nC	143 mOhm	15 V	MOSFET (Metal Oxide)	30 A	Through Hole	600 V	TO-220FM	2500 pF				150 °C		95 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 9.17
		10	$ 7.86

Description

General part information

R6030KNZ4 Series

R6030JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Documents

Technical documentation and resources

No documents available