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TO-220-3, TO-220AB
Discrete Semiconductor Products

STP30N10F7

Obsolete
STMicroelectronics

MOSFET N-CH 100V 32A TO220AB

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TO-220-3, TO-220AB
Discrete Semiconductor Products

STP30N10F7

Obsolete
STMicroelectronics

MOSFET N-CH 100V 32A TO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP30N10F7
Current - Continuous Drain (Id) @ 25°C32 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1270 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)50 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 844$ 2.41
Tube 1$ 1.62
50$ 1.30
100$ 1.07
500$ 0.91

Description

General part information

STP30 Series

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Documents

Technical documentation and resources

No documents available