Discrete Semiconductor Products

STP30N65DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 102 MOHM TYP., 28 A MDMESH DM6 POWER MOSFET IN A TO-220 PACKAGE

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DocumentsSTP30N65DM6AG | Datasheet

Discrete Semiconductor Products

STP30N65DM6AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 102 MOHM TYP., 28 A MDMESH DM6 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsSTP30N65DM6AG | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP30N65DM6AG

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	223 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STP30 Series

N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Grade
STMicroelectronics STP30N10F7	19 nC	1270 pF	TO-220AB	32 A	MOSFET (Metal Oxide)	TO-220-3	4.5 V	100 V	N-Channel	20 V	Through Hole	10 V	50 W	175 °C	-55 °C	24 mOhm
STMicroelectronics STP30NF10			TO-220	35 A	MOSFET (Metal Oxide)	TO-220-3	4 V	100 V	N-Channel	20 V	Through Hole	10 V	115 W	175 °C	-55 °C	45 mOhm	55 nC
STMicroelectronics STP30N65DM6AG			TO-220	28 A	MOSFET (Metal Oxide)	TO-220-3	4.75 V	650 V	N-Channel	25 V	Through Hole	10 V	223 W	150 °C	-55 °C	115 mOhm	46 nC	2000 pF	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1000	$ 3.28
	N/A	0	$ 2.90

Description

General part information

STP30 Series

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Documents

Technical documentation and resources

STP30N65DM6AG | Datasheet

Datasheet