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BSM180C12P2E202

Discrete Semiconductor Products

BSM180C12P2E202

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Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 204 A, 1.2 KV, MODULE

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Search across all available documentation for this part.

DocumentsMethod for Calculating Junction Temperature from Transient Thermal Resistance Data How to Use PLECS Models +23

BSM180C12P2E202

Discrete Semiconductor Products

BSM180C12P2E202

Active

Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 204 A, 1.2 KV, MODULE

Deep-Dive with AI

DocumentsMethod for Calculating Junction Temperature from Transient Thermal Resistance Data How to Use PLECS Models +23

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSM180C12P2E202

Current - Continuous Drain (Id) @ 25°C	204 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	20000 pF
Mounting Type	Chassis Mount
Operating Temperature	175 °C
Package / Case	Module
Power Dissipation (Max)	1360 W
Supplier Device Package	Module
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-6 V
Vgs(th) (Max) @ Id [Max]	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 600.00
Newark	Each	1	$ 615.70

Description

General part information

BSM180C12P3C202 Series

BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.

Documents

Technical documentation and resources

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

How to Use PLECS Models

Technical Article

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

Notes for Temperature Measurement Using Thermocouples

About Export Regulations

Export Information

How to Create Symbols for PSpice Models

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Optimized heat sink assembly method for effective heat dissipation

Measurement Method and Usage of Thermal Resistance RthJC

Compliance of the ELV directive

Environmental Data

What Is Thermal Design

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Precautions for Thermal Resistance of Insulation Sheet

Judgment Criteria of Thermal Evaluation

PCB Layout Thermal Design Guide

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

How to Use the Thermal Resistance and Thermal Characteristics Parameters

4 Steps for Successful Thermal Designing of Power Devices

Thermal Resistance Measurement Method for SiC MOSFET

BSM180C12P3C202 Series

1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power - Max [Max]	Drain to Source Voltage (Vdss)	Configuration
Rohm Semiconductor BSM180C12P3C202	880 W	5.6 V	N-Channel	1200 V	Module	150 °C	-40 °C	Chassis Mount	Module	180 A	9000 pF
Rohm Semiconductor BSM180C12P2E202	1360 W		N-Channel	1200 V	Module			Chassis Mount	Module	204 A		-6 V	22 V	175 °C	4 V	20000 pF
Rohm Semiconductor BSM180D12P2E002				1200 V	Module	150 °C	-40 °C	Chassis Mount	Module	204 A					4 V	18000 pF	Silicon Carbide (SiC)	1360 W	1.2 kV	2 N-Channel (Half Bridge)