Beta

⌘K

Product schematic image

Discrete Semiconductor Products

BSM180D12P3C007

Active

Rohm Semiconductor

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 180 A, 1.2 KV, MODULE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsAbout Export Regulations Method for Calculating Junction Temperature from Transient Thermal Resistance Data +45

Product schematic image

Discrete Semiconductor Products

BSM180D12P3C007

Active

Rohm Semiconductor

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 180 A, 1.2 KV, MODULE

Deep-Dive with AI

DocumentsAbout Export Regulations Method for Calculating Junction Temperature from Transient Thermal Resistance Data +45

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSM180D12P3C007

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	Module
Power - Max [Max]	880 W
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 563.26
	N/A	13	$ 563.26
Newark	Each	1	$ 585.73

Description

General part information

BSM180 Series

BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.

Documents

Technical documentation and resources

About Export Regulations

Export Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Notes for Calculating Power Consumption:Static Operation

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

How to Create Symbols for PSpice Models

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Basics of Thermal Resistance and Heat Dissipation

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Taping Information

Package Information

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Optimized heat sink assembly method for effective heat dissipation

How to Use PSIM Models

Schematic Design & Verification

Thermal Resistance Measurement Method for SiC MOSFET

Part Explanation

Application Note

What Is Thermal Design

Notes for Temperature Measurement Using Forward Voltage of PN Junction

BSM180D12P3C007 Data Sheet

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

Inner Structure

Package Information

4 Steps for Successful Thermal Designing of Power Devices

How to Use PLECS Models

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Measurement Method and Usage of Thermal Resistance RthJC

Compliance of the ELV directive

Environmental Data

How to Use LTspice® Models

Schematic Design & Verification

What is a Thermal Model? (SiC Power Device)

Reliability Test Result

Manufacturing Data

PCB Layout Thermal Design Guide

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

Technical Article

Judgment Criteria of Thermal Evaluation

Evaluation Board User's Guide for C-type Full SiC Module (BSMGD3C12D24-EVK001)

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

ESD Data

Characteristics Data

Precautions for Thermal Resistance of Insulation Sheet

θ<sub>JA</sub> and Ψ<sub>JT</sub>

How to Use Thermal Models

Precautions When Measuring the Rear of the Package with a Thermocouple

Notes for Temperature Measurement Using Thermocouples

How to measure the oscillation occurs between parallel-connected devices

Technical Article

BSM080D12P2C008

BSM180 Series

1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET

Part	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Configuration	Operating Temperature	Technology	Power - Max [Max]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor BSM180C12P3C202	Chassis Mount	5.6 V	1.2 kV	-40 °C	150 °C	Module	880 W	N-Channel	Module	180 A	9000 pF
Rohm Semiconductor BSM180D12P3C007	Surface Mount	5.6 V	1.2 kV			Module			Module	180 A		1200 V	2 N-Channel (Dual)	175 °C	Silicon Carbide (SiC)	880 W
Rohm Semiconductor BSM180C12P2E202	Chassis Mount	4 V	1.2 kV			Module	1.36 kW	N-Channel	Module	204 A				175 °C			-6 V 22 V	20000 pF
Rohm Semiconductor BSM180D12P2E002	Chassis Mount	4 V	1.2 kV	-40 °C	150 °C	Module			Module	204 A		1200 V	2 N-Channel		Silicon Carbide (SiC)	1360 W		18000 pF