Discrete Semiconductor Products

BSM180D12P2E002

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SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 204 A, 1.2 KV, MODULE

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DocumentsPrecautions for Thermal Resistance of Insulation Sheet 4 Steps for Successful Thermal Designing of Power Devices +26

Discrete Semiconductor Products

BSM180D12P2E002

Active

Rohm Semiconductor

SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 204 A, 1.2 KV, MODULE

Deep-Dive with AI

DocumentsPrecautions for Thermal Resistance of Insulation Sheet 4 Steps for Successful Thermal Designing of Power Devices +26

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSM180D12P2E002

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	204 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Input Capacitance (Ciss) (Max) @ Vds	18000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	1360 W
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id [Max]	4 V

BSM180C12P3C202 Series

1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power - Max [Max]	Drain to Source Voltage (Vdss)	Configuration
Rohm Semiconductor BSM180C12P3C202	880 W	5.6 V	N-Channel	1200 V	Module	150 °C	-40 °C	Chassis Mount	Module	180 A	9000 pF
Rohm Semiconductor BSM180C12P2E202	1360 W		N-Channel	1200 V	Module			Chassis Mount	Module	204 A		-6 V	22 V	175 °C	4 V	20000 pF
Rohm Semiconductor BSM180D12P2E002				1200 V	Module	150 °C	-40 °C	Chassis Mount	Module	204 A					4 V	18000 pF	Silicon Carbide (SiC)	1360 W	1.2 kV	2 N-Channel (Half Bridge)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 676.50
Newark	Each	1	$ 687.38
		8	$ 687.38
		12	$ 687.37
		28	$ 687.37

Description

General part information

BSM180C12P3C202 Series

BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.