BSM180 Series

1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET

Catalog

1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET

Part	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Configuration	Operating Temperature	Technology	Power - Max [Max]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor BSM180C12P3C202	Chassis Mount	5.6 V	1.2 kV	-40 °C	150 °C	Module	880 W	N-Channel	Module	180 A	9000 pF
Rohm Semiconductor BSM180D12P3C007	Surface Mount	5.6 V	1.2 kV			Module			Module	180 A		1200 V	2 N-Channel (Dual)	175 °C	Silicon Carbide (SiC)	880 W
Rohm Semiconductor BSM180C12P2E202	Chassis Mount	4 V	1.2 kV			Module	1.36 kW	N-Channel	Module	204 A				175 °C			-6 V 22 V	20000 pF
Rohm Semiconductor BSM180D12P2E002	Chassis Mount	4 V	1.2 kV	-40 °C	150 °C	Module			Module	204 A		1200 V	2 N-Channel		Silicon Carbide (SiC)	1360 W		18000 pF

Catalog

1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET

Description

BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.