BSM180C12P3C202 Series

1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET

Catalog

1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power - Max [Max]	Drain to Source Voltage (Vdss)	Configuration
Rohm Semiconductor BSM180C12P3C202	880 W	5.6 V	N-Channel	1200 V	Module	150 °C	-40 °C	Chassis Mount	Module	180 A	9000 pF
Rohm Semiconductor BSM180C12P2E202	1360 W		N-Channel	1200 V	Module			Chassis Mount	Module	204 A		-6 V	22 V	175 °C	4 V	20000 pF
Rohm Semiconductor BSM180D12P2E002				1200 V	Module	150 °C	-40 °C	Chassis Mount	Module	204 A					4 V	18000 pF	Silicon Carbide (SiC)	1360 W	1.2 kV	2 N-Channel (Half Bridge)

Catalog

1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET

Key Features

• Low surge, low switching loss., High-speed switching possible., Reduced temperature dependance.

Description

BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.