STGB30V60DF
ActiveIGBTS TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 30 A VERY HIGH SPEED
STGB30V60DF
ActiveIGBTS TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 30 A VERY HIGH SPEED
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB30V60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 163 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 258 W |
| Reverse Recovery Time (trr) | 53 ns |
| Supplier Device Package | D2PAK |
| Switching Energy | 383 µJ, 233 µJ |
| Td (on/off) @ 25°C | 45 ns, 189 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB30 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources
