Discrete Semiconductor Products

STGB30NC60WT4

Obsolete

STMicroelectronics

IGBT 600V 60A 200W D2PAK

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Discrete Semiconductor Products

STGB30NC60WT4

Obsolete

STMicroelectronics

IGBT 600V 60A 200W D2PAK

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGB30NC60WT4

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	102 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]	200 W
Supplier Device Package	D2PAK
Switching Energy	181 µJ, 305 µJ
Td (on/off) @ 25°C	29.5ns/118ns
Test Condition	10 Ohm, 390 V, 20 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGB30 Series

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Part	Gate Charge	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Test Condition	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Switching Energy	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	IGBT Type	Input Type	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
STMicroelectronics STGB30NC60WT4	102 nC	29.5ns/118ns	60 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	200 W	10 Ohm 15 V 20 A 390 V	Surface Mount	D2PAK	150 °C	-55 °C	2.5 V	150 A	181 µJ 305 µJ
STMicroelectronics STGB30V60DF	163 nC		60 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	258 W	10 Ohm 15 V 30 A 400 V	Surface Mount	D2PAK	175 °C	-55 °C	2.3 V	120 A	233 µJ 383 µJ	45 ns 189 ns	53 ns	Trench Field Stop
STMicroelectronics STGB30H60DLLFBAG	110 nC	-	60 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	260 W	5 V 10 Ohm 30 A 400 V	Surface Mount	TO-263 (D2PAK)	175 °C	-55 °C	2.15 V	120 A	600 µJ	320 ns		Trench Field Stop	Logic
STMicroelectronics STGB30H60DLFB	149 nC	-	60 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	260 W	10 Ohm 15 V 30 A 400 V	Surface Mount	TO-263 (D2PAK)	175 °C	-55 °C	2 V	120 A	393 µJ	146 ns		Trench Field Stop
STMicroelectronics STGB30H60DFB	149 nC		60 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	260 W	10 Ohm 15 V 30 A 400 V	Surface Mount	TO-263 (D2PAK)	175 °C	-55 °C	2 V	120 A	293 µJ 383 µJ		53 ns	Trench Field Stop		37 ns	146 ns
STMicroelectronics STGB30H65FB	149 nC		60 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	650 V	260 W	10 Ohm 15 V 30 A 400 V	Surface Mount	TO-263 (D2PAK)	175 °C	-55 °C	2 V	120 A				Trench Field Stop		37 ns	146 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	55	$ 2.49

Description

General part information

STGB30 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources