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TO-263 D2PAK
Discrete Semiconductor Products

STGB30H60DFB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+11
TO-263 D2PAK
Discrete Semiconductor Products

STGB30H60DFB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+11

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGB30H60DFB
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge149 nC
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]260 W
Reverse Recovery Time (trr)53 ns
Supplier Device PackageTO-263 (D2PAK)
Switching Energy383 µJ, 293 µJ
Td (on/off) @ 25°C [custom]37 ns
Td (on/off) @ 25°C [custom]146 ns
Test Condition30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

STGB30 Series

Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed

PartGate ChargeTd (on/off) @ 25°CCurrent - Collector (Ic) (Max) [Max]Package / CaseVoltage - Collector Emitter Breakdown (Max) [Max]Power - Max [Max]Test ConditionMounting TypeSupplier Device PackageOperating Temperature [Max]Operating Temperature [Min]Vce(on) (Max) @ Vge, IcCurrent - Collector Pulsed (Icm)Switching EnergyTd (on/off) @ 25°CReverse Recovery Time (trr)IGBT TypeInput TypeTd (on/off) @ 25°C [custom]Td (on/off) @ 25°C [custom]
D²PAK
STMicroelectronics
STGB30NC60WT4
102 nC
29.5ns/118ns
60 A
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
600 V
200 W
10 Ohm
15 V
20 A
390 V
Surface Mount
D2PAK
150 °C
-55 °C
2.5 V
150 A
181 µJ
305 µJ
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STMicroelectronics
STGB30V60DF
163 nC
60 A
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
600 V
258 W
10 Ohm
15 V
30 A
400 V
Surface Mount
D2PAK
175 °C
-55 °C
2.3 V
120 A
233 µJ
383 µJ
45 ns
189 ns
53 ns
Trench Field Stop
D2Pak
STMicroelectronics
STGB30H60DLLFBAG
110 nC
-
60 A
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
600 V
260 W
5 V
10 Ohm
30 A
400 V
Surface Mount
TO-263 (D2PAK)
175 °C
-55 °C
2.15 V
120 A
600 µJ
320 ns
Trench Field Stop
Logic
D2Pak
STMicroelectronics
STGB30H60DLFB
149 nC
-
60 A
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
600 V
260 W
10 Ohm
15 V
30 A
400 V
Surface Mount
TO-263 (D2PAK)
175 °C
-55 °C
2 V
120 A
393 µJ
146 ns
Trench Field Stop
TO-263 D2PAK
STMicroelectronics
STGB30H60DFB
149 nC
60 A
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
600 V
260 W
10 Ohm
15 V
30 A
400 V
Surface Mount
TO-263 (D2PAK)
175 °C
-55 °C
2 V
120 A
293 µJ
383 µJ
53 ns
Trench Field Stop
37 ns
146 ns
TO-263 D2PAK
STMicroelectronics
STGB30H65FB
149 nC
60 A
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
650 V
260 W
10 Ohm
15 V
30 A
400 V
Surface Mount
TO-263 (D2PAK)
175 °C
-55 °C
2 V
120 A
Trench Field Stop
37 ns
146 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.43
Digi-Reel® 1$ 3.43
N/A 0$ 3.43
Tape & Reel (TR) 1000$ 1.17
2000$ 1.10
NewarkEach (Supplied on Cut Tape) 1$ 3.45
10$ 2.68
25$ 2.52
50$ 2.35
100$ 2.19
250$ 1.99
500$ 1.93
1000$ 1.79

Description

General part information

STGB30 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.