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Discrete Semiconductor Products

JANTX2N3636UB

Active
Microchip Technology

175 V SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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UB
Discrete Semiconductor Products

JANTX2N3636UB

Active
Microchip Technology

175 V SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N3636UB
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]50 hFE
GradeMilitary
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]1.5 W
QualificationMIL-PRF-19500/357
Supplier Device PackageUB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max)175 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 15.08
Microchip DirectN/A 1$ 16.24
NewarkEach 100$ 15.08
500$ 14.50

Description

General part information

JANTX2N3636UB-Transistor Series

This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357.