JANTXV2N3636L
Active175 V SMALL-SIGNAL BJT TO-5 ROHS COMPLIANT: YES
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JANTXV2N3636L
Active175 V SMALL-SIGNAL BJT TO-5 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N3636L |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 1 W |
| Qualification | MIL-PRF-19500/357 |
| Supplier Device Package | TO-5AA |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 14.07 | |
| Microchip Direct | N/A | 1 | $ 15.15 | |
| Newark | Each | 100 | $ 14.07 | |
| 500 | $ 13.53 | |||
Description
General part information
JANTX2N3636UB-Transistor Series
This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC). The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357.
Documents
Technical documentation and resources
