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Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC7672_F125 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A, 16.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3890 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 33 W, 2.3 W |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FDMC7678 Series
This part number is not recommended for new designs. Please apply NTTFS4C06NTAG as a replacement. This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Documents
Technical documentation and resources
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