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8-MLP, Power33
Discrete Semiconductor Products

FDMC7672_F125

Obsolete
ON Semiconductor

MOSFET N-CH 30V 16.9A/20A 8MLP

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8-MLP, Power33
Discrete Semiconductor Products

FDMC7672_F125

Obsolete
ON Semiconductor

MOSFET N-CH 30V 16.9A/20A 8MLP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC7672_F125
Current - Continuous Drain (Id) @ 25°C20 A, 16.9 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs57 nC
Input Capacitance (Ciss) (Max) @ Vds3890 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)33 W, 2.3 W
Rds On (Max) @ Id, Vgs5.7 mOhm
Supplier Device Package8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FDMC7678 Series

This part number is not recommended for new designs. Please apply NTTFS4C06NTAG as a replacement. This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Documents

Technical documentation and resources

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