
FDMC7678-L701
ActiveN-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 19.5A, 5.3MΩ
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FDMC7678-L701
ActiveN-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 19.5A, 5.3MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC7678-L701 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17.5 A, 19.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 39 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 2.3 W, 31 W |
| Rds On (Max) @ Id, Vgs | 5.3 mOhm |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
FDMC7678 Series
N-Channel Dual Cool<sup>TM</sup> 33 PowerTrench<sup>®</sup> MOSFET 30V, 40A, 2.2mΩ
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | FET Type | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | -55 °C | 150 °C | 17.5 A 19.5 A | 2.3 W 31 W | 8-PowerWDFN | 39 nC | Surface Mount | 30 V | 4.5 V 10 V | 3 V | 20 V | 5.3 mOhm | N-Channel | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | 2410 pF | ||
ON Semiconductor | -55 °C | 150 °C | 14.8 A | 2.3 W 31 W | 8-PowerWDFN | Surface Mount | 30 V | 4.5 V 10 V | 3 V | 20 V | 7.2 mOhm | N-Channel | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | 2855 pF | 42 nC | ||
ON Semiconductor | -55 °C | 150 °C | 17.5 A 19.5 A | 2.3 W 31 W | 8-PowerWDFN | 39 nC | Surface Mount | 30 V | 4.5 V 10 V | 3 V | 20 V | 5.3 mOhm | N-Channel | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | 2410 pF | ||
ON Semiconductor | -55 °C | 150 °C | 30 A 40 A | 3 W 78 W | 8-PowerTDFN | Surface Mount | 30 V | 4.5 V 10 V | 2.5 V | 20 V | 2.2 mOhm | N-Channel | MOSFET (Metal Oxide) | Dual Cool ™ 33 | 5170 pF | 76 nC | ||
ON Semiconductor | -55 °C | 150 °C | 20 A 40 A | 2.3 W 41 W | 8-PowerTDFN | Surface Mount | 30 V | 4.5 V 10 V | 20 V | 2.2 mOhm | N-Channel | MOSFET (Metal Oxide) | Power33 | 4325 pF | 66 nC | 2.5 V | ||
ON Semiconductor | -55 °C | 150 °C | 20 A 40 A | 2.3 W 41 W | 8-PowerTDFN | 86 nC | Surface Mount | 30 V | 4.5 V 10 V | 2.5 V | 20 V | 2.2 mOhm | N-Channel | MOSFET (Metal Oxide) | Power33 | 4830 pF | ||
ON Semiconductor | -55 °C | 150 °C | 16.9 A 20 A | 2.3 W 33 W | 8-PowerWDFN | Surface Mount | 30 V | 4.5 V 10 V | 3 V | 20 V | 5.7 mOhm | N-Channel | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | 3890 pF | 57 nC | ||
ON Semiconductor | -55 °C | 150 °C | 14.8 A | 2.3 W 31 W | 8-PowerWDFN | Surface Mount | 30 V | 4.5 V 10 V | 3 V | 20 V | 7.2 mOhm | N-Channel | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | 2855 pF | 42 nC | ||
ON Semiconductor | -55 °C | 150 °C | 20 A 40 A | 2.3 W 41 W | 8-PowerTDFN | Surface Mount | 30 V | 4.5 V 10 V | 20 V | 2.2 mOhm | N-Channel | MOSFET (Metal Oxide) | Power33 | 4325 pF | 66 nC | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.36 | |
| 10 | $ 0.85 | |||
| 100 | $ 0.57 | |||
| 500 | $ 0.44 | |||
| 1000 | $ 0.40 | |||
| Digi-Reel® | 1 | $ 1.36 | ||
| 10 | $ 0.85 | |||
| 100 | $ 0.57 | |||
| 500 | $ 0.44 | |||
| 1000 | $ 0.40 | |||
| Tape & Reel (TR) | 3000 | $ 0.35 | ||
| 6000 | $ 0.33 | |||
| 9000 | $ 0.32 | |||
| Newark | Each | 2500 | $ 0.34 | |
| 10000 | $ 0.33 | |||
| ON Semiconductor | N/A | 1 | $ 0.34 | |
Description
General part information
FDMC7678 Series
This part number is not recommended for new designs. Please apply NTTFS4C06NTAG as a replacement. This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Documents
Technical documentation and resources