Discrete Semiconductor Products

FDMC7678

Obsolete

ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 19.5 A, 30 V, 0.0042 OHM, 10 V, 1.5 V

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Discrete Semiconductor Products

FDMC7678

Obsolete

ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 19.5 A, 30 V, 0.0042 OHM, 10 V, 1.5 V

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DocumentsDatasheet Datasheet +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMC7678

Current - Continuous Drain (Id) @ 25°C	17.5 A, 19.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	2410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.3 W, 31 W
Rds On (Max) @ Id, Vgs	5.3 mOhm
Supplier Device Package	8-MLP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC7678 Series

N-Channel Dual Cool<sup>TM</sup> 33 PowerTrench<sup>®</sup> MOSFET 30V, 40A, 2.2mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]
ON Semiconductor FDMC7678	-55 °C	150 °C	17.5 A 19.5 A	2.3 W 31 W	8-PowerWDFN	39 nC	Surface Mount	30 V	4.5 V 10 V	3 V	20 V	5.3 mOhm	N-Channel	MOSFET (Metal Oxide)	8-MLP (3.3x3.3)	2410 pF
ON Semiconductor FDMC7680	-55 °C	150 °C	14.8 A	2.3 W 31 W	8-PowerWDFN		Surface Mount	30 V	4.5 V 10 V	3 V	20 V	7.2 mOhm	N-Channel	MOSFET (Metal Oxide)	8-MLP (3.3x3.3)	2855 pF	42 nC
ON Semiconductor FDMC7678-L701	-55 °C	150 °C	17.5 A 19.5 A	2.3 W 31 W	8-PowerWDFN	39 nC	Surface Mount	30 V	4.5 V 10 V	3 V	20 V	5.3 mOhm	N-Channel	MOSFET (Metal Oxide)	8-MLP (3.3x3.3)	2410 pF
ON Semiconductor FDMC7660DC	-55 °C	150 °C	30 A 40 A	3 W 78 W	8-PowerTDFN		Surface Mount	30 V	4.5 V 10 V	2.5 V	20 V	2.2 mOhm	N-Channel	MOSFET (Metal Oxide)	Dual Cool ™ 33	5170 pF	76 nC
ON Semiconductor FDMC7660S	-55 °C	150 °C	20 A 40 A	2.3 W 41 W	8-PowerTDFN		Surface Mount	30 V	4.5 V 10 V		20 V	2.2 mOhm	N-Channel	MOSFET (Metal Oxide)	Power33	4325 pF	66 nC	2.5 V
ON Semiconductor FDMC7660	-55 °C	150 °C	20 A 40 A	2.3 W 41 W	8-PowerTDFN	86 nC	Surface Mount	30 V	4.5 V 10 V	2.5 V	20 V	2.2 mOhm	N-Channel	MOSFET (Metal Oxide)	Power33	4830 pF
ON Semiconductor FDMC7672_F125	-55 °C	150 °C	16.9 A 20 A	2.3 W 33 W	8-PowerWDFN		Surface Mount	30 V	4.5 V 10 V	3 V	20 V	5.7 mOhm	N-Channel	MOSFET (Metal Oxide)	8-MLP (3.3x3.3)	3890 pF	57 nC
ON Semiconductor FDMC7680	-55 °C	150 °C	14.8 A	2.3 W 31 W	8-PowerWDFN		Surface Mount	30 V	4.5 V 10 V	3 V	20 V	7.2 mOhm	N-Channel	MOSFET (Metal Oxide)	8-MLP (3.3x3.3)	2855 pF	42 nC
ON Semiconductor FDMC7660S	-55 °C	150 °C	20 A 40 A	2.3 W 41 W	8-PowerTDFN		Surface Mount	30 V	4.5 V 10 V		20 V	2.2 mOhm	N-Channel	MOSFET (Metal Oxide)	Power33	4325 pF	66 nC	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each (Supplied on Full Reel)	3000	$ 0.44
		6000	$ 0.40
		12000	$ 0.36
		18000	$ 0.35
		30000	$ 0.34

Description

General part information

FDMC7678 Series

This part number is not recommended for new designs. Please apply NTTFS4C06NTAG as a replacement. This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Documents

Technical documentation and resources

Datasheet

Package Drawing-511DR-WDFN8 3.3x3.3, 0.65P

Package Drawing

Product Change Notice EN

Datasheet