Specification	MJE210STU

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	45 hFE
Frequency - Transition	65 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	15 W
Supplier Device Package	TO-126-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max)	25 V

MJE210(LEGACY%20FAIRCHILD) Series

5.0 A, 25 V PNP Bipolar Power Transistor

Part	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature
ON Semiconductor MJE210T	PNP	150 °C	-65 °C	15 W	45 hFE	40 V	1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126	5 A
ON Semiconductor MJE210STU	PNP			15 W	45 hFE		1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126-3	5 A	25 V	150 °C
ON Semiconductor MJE210G	PNP	150 °C	-65 °C	15 W	45 hFE	40 V	1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126	5 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJE210(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.