Discrete Semiconductor Products

MJE210T

Obsolete

ON Semiconductor

TRANS PNP 40V 5A TO126

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Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

MJE210T

Obsolete

ON Semiconductor

TRANS PNP 40V 5A TO126

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MJE210T

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	45 hFE
Frequency - Transition	65 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	15 W
Supplier Device Package	TO-126
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

MJE210(LEGACY%20FAIRCHILD) Series

5.0 A, 25 V PNP Bipolar Power Transistor

Part	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature
ON Semiconductor MJE210T	PNP	150 °C	-65 °C	15 W	45 hFE	40 V	1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126	5 A
ON Semiconductor MJE210STU	PNP			15 W	45 hFE		1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126-3	5 A	25 V	150 °C
ON Semiconductor MJE210G	PNP	150 °C	-65 °C	15 W	45 hFE	40 V	1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126	5 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJE210(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

Documents

Technical documentation and resources