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TO-126
Discrete Semiconductor Products

MJE210G

Obsolete
ON Semiconductor

5.0 A, 25 V PNP BIPOLAR POWER TRANSISTOR

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TO-126
Discrete Semiconductor Products

MJE210G

Obsolete
ON Semiconductor

5.0 A, 25 V PNP BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE210G
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce45 hFE
Frequency - Transition65 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]15 W
Supplier Device PackageTO-126
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 1.30
10$ 0.82
100$ 0.54
500$ 0.42

Description

General part information

MJE210(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.