MJE210(LEGACY%20FAIRCHILD) Series

5.0 A, 25 V PNP Bipolar Power Transistor

Catalog

5.0 A, 25 V PNP Bipolar Power Transistor

Part	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature
ON Semiconductor MJE210T	PNP	150 °C	-65 °C	15 W	45 hFE	40 V	1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126	5 A
ON Semiconductor MJE210STU	PNP			15 W	45 hFE		1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126-3	5 A	25 V	150 °C
ON Semiconductor MJE210G	PNP	150 °C	-65 °C	15 W	45 hFE	40 V	1.8 V	TO-126-3 TO-225AA	65 MHz	100 nA	Through Hole	TO-126	5 A

Catalog

5.0 A, 25 V PNP Bipolar Power Transistor

Key Features

• Collector-Emitter Sustaining Voltage -VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

• High DC Current Gain -hFE= 70 (Min) @ IC= 500 mAdchFE= 45 (Min) @ IC= 2.0 AdchFE= 10 (Min) @ IC= 5.0 Adc

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdcVCE(sat)= 0.75 Vdc (Max) @ IC= 2.0 Adc

• High Current-Gain - Bandwidth Product -fT= 65 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakage -ICBO= 100 nAdc @ Rated VCB

• Pb-Free Packages are Available

Description

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.