Discrete Semiconductor Products

R6020KNZC17

Active

600V 20A TO-3PF, HIGH-SPEED SWITCHING POWER MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsHow to Create Symbols for PSpice Models Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials +28

Discrete Semiconductor Products

R6020KNZC17

Active

Rohm Semiconductor

600V 20A TO-3PF, HIGH-SPEED SWITCHING POWER MOSFET

Deep-Dive with AI

DocumentsHow to Create Symbols for PSpice Models Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials +28

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6020KNZC17

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1550 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	196 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

R6020ENZ4 Series

600V 20A TO-3PF, PrestoMOS™ with integrated high-speed diode

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]
Rohm Semiconductor R6020ENZ4C13	N-Channel	1400 pF	196 mOhm	10 V	20 A	20 V	60 nC	TO-247-3	600 V	150 °C	Through Hole	231 W	MOSFET (Metal Oxide)	TO-247
Rohm Semiconductor R6020ENJTL	N-Channel	1400 pF	196 mOhm	10 V	20 A	20 V	60 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	150 °C	Surface Mount		MOSFET (Metal Oxide)	LPTS	40 W
Rohm Semiconductor R6020JNJGTL	N-Channel	1500 pF	234 mOhm	15 V	20 A	30 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V		Surface Mount	252 W	MOSFET (Metal Oxide)	LPTS		45 nC	7 V	-55 °C	150 °C
Rohm Semiconductor R6020ENX	N-Channel	1400 pF		10 V	20 A	20 V	60 nC	TO-220-3 Full Pack	600 V	150 °C	Through Hole	50 W	MOSFET (Metal Oxide)	TO-220FM						196 mOhm
Rohm Semiconductor R6020FNX	N-Channel	2040 pF		10 V	20 A	30 V	65 nC	TO-220-3 Full Pack	600 V	150 °C	Through Hole	50 W	MOSFET (Metal Oxide)	TO-220FM						250 mOhm
Rohm Semiconductor R6020ENZC17	N-Channel	1400 pF	196 mOhm	10 V	20 A	20 V	60 nC	TO-3P-3 Full Pack	600 V	150 °C	Through Hole		MOSFET (Metal Oxide)	TO-3PF	120 W
Rohm Semiconductor R6020KNZC17	N-Channel	1550 pF	196 mOhm	10 V	20 A	20 V	40 nC	TO-3P-3 Full Pack	600 V	150 °C	Through Hole		MOSFET (Metal Oxide)	TO-3PF	68 W
Rohm Semiconductor R6020JNZC17	N-Channel	1500 pF	234 mOhm	15 V	20 A	30 V		TO-3P-3 Full Pack	600 V	150 °C	Through Hole	76 W	MOSFET (Metal Oxide)	TO-3PF		45 nC	7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.49
		30	$ 1.36
		120	$ 1.14

Description

General part information

R6020ENZ4 Series

R6020JNZ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).