Specification	R6020ENJTL

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	196 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

R6020ENZ4 Series

600V 20A TO-3PF, PrestoMOS™ with integrated high-speed diode

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]
Rohm Semiconductor R6020ENZ4C13	N-Channel	1400 pF	196 mOhm	10 V	20 A	20 V	60 nC	TO-247-3	600 V	150 °C	Through Hole	231 W	MOSFET (Metal Oxide)	TO-247
Rohm Semiconductor R6020ENJTL	N-Channel	1400 pF	196 mOhm	10 V	20 A	20 V	60 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	150 °C	Surface Mount		MOSFET (Metal Oxide)	LPTS	40 W
Rohm Semiconductor R6020JNJGTL	N-Channel	1500 pF	234 mOhm	15 V	20 A	30 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V		Surface Mount	252 W	MOSFET (Metal Oxide)	LPTS		45 nC	7 V	-55 °C	150 °C
Rohm Semiconductor R6020ENX	N-Channel	1400 pF		10 V	20 A	20 V	60 nC	TO-220-3 Full Pack	600 V	150 °C	Through Hole	50 W	MOSFET (Metal Oxide)	TO-220FM						196 mOhm
Rohm Semiconductor R6020FNX	N-Channel	2040 pF		10 V	20 A	30 V	65 nC	TO-220-3 Full Pack	600 V	150 °C	Through Hole	50 W	MOSFET (Metal Oxide)	TO-220FM						250 mOhm
Rohm Semiconductor R6020ENZC17	N-Channel	1400 pF	196 mOhm	10 V	20 A	20 V	60 nC	TO-3P-3 Full Pack	600 V	150 °C	Through Hole		MOSFET (Metal Oxide)	TO-3PF	120 W
Rohm Semiconductor R6020KNZC17	N-Channel	1550 pF	196 mOhm	10 V	20 A	20 V	40 nC	TO-3P-3 Full Pack	600 V	150 °C	Through Hole		MOSFET (Metal Oxide)	TO-3PF	68 W
Rohm Semiconductor R6020JNZC17	N-Channel	1500 pF	234 mOhm	15 V	20 A	30 V		TO-3P-3 Full Pack	600 V	150 °C	Through Hole	76 W	MOSFET (Metal Oxide)	TO-3PF		45 nC	7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.80
		10	$ 2.49
		100	$ 1.74
		500	$ 1.42
	Digi-Reel®	1	$ 3.80
		10	$ 2.49
		100	$ 1.74
		500	$ 1.42
	Tape & Reel (TR)	1000	$ 1.32
		2000	$ 1.25
Newark	Each (Supplied on Cut Tape)	1	$ 3.83
		10	$ 2.53
		25	$ 2.28
		50	$ 2.14
		100	$ 2.00

Description

General part information

R6020ENZ4 Series

R6020JNZ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Documents

Technical documentation and resources

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Report of SVHC under REACH Regulation

Environmental Data

PCB Layout Thermal Design Guide

Thermal Design

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Two-Resistor Model for Thermal Simulation

Thermal Design

About Flammability of Materials

Environmental Data

Package Dimensions

Package Information

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

R6020ENJTL

Deep-Dive with AI

R6020ENJTL

Deep-Dive with AI

Technical Specifications

R6020ENZ4 Series

Pricing

Description

R6020ENZ4 Series

Documents

Technical Data Sheet EN

Importance of Probe Calibration When Measuring Power: Deskew

Part Explanation

Method for Monitoring Switching Waveform

List of Transistor Package Thermal Resistance

Notes for Temperature Measurement Using Thermocouples

Explanation for Marking

How to Create Symbols for PSpice Models

Judgment Criteria of Thermal Evaluation

Temperature derating method for Safe Operating Area (SOA)

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Taping Information

Reliability Test Result

About Export Regulations

Moisture Sensitivity Level - Transistors

Impedance Characteristics of Bypass Capacitor

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Types and Features of Transistors

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Measurement Method and Usage of Thermal Resistance RthJC

What is a Thermal Model? (Transistor)

Condition of Soldering / Land Pattern Reference

Inner Structure

What Is Thermal Design

How to Use LTspice&reg; Models: Tips for Improving Convergence

ESD Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Report of SVHC under REACH Regulation

PCB Layout Thermal Design Guide

MOSFET Gate Drive Current Setting for Motor Driving

Two-Resistor Model for Thermal Simulation

About Flammability of Materials

Package Dimensions

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

R6020ENZ4 Series

How to Use LTspice® Models: Tips for Improving Convergence