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TO-220-3
Discrete Semiconductor Products

R6020ENX

NRND
Rohm Semiconductor

MOSFET, N-CH, 600V, 20A, TO-220FM

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Search across all available documentation for this part.

DocumentsTO-220FM Part MarkingTO220FM Inner Structure+2
TO-220-3
Discrete Semiconductor Products

R6020ENX

NRND
Rohm Semiconductor

MOSFET, N-CH, 600V, 20A, TO-220FM

Deep-Dive with AI

DocumentsTO-220FM Part MarkingTO220FM Inner Structure+2

Technical Specifications

Parameters and characteristics for this part

SpecificationR6020ENX
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC
Input Capacitance (Ciss) (Max) @ Vds1400 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)50 W
Rds On (Max) @ Id, Vgs196 mOhm
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

R6020 Series

600V 20A TO-263, PrestoMOS™ with integrated high-speed diode

PartRds On (Max) @ Id, VgsMounting TypeDrain to Source Voltage (Vdss)Operating TemperatureTechnologyCurrent - Continuous Drain (Id) @ 25°CPower Dissipation (Max)FET TypePackage / CaseVgs (Max)Supplier Device PackageDrive Voltage (Max Rds On, Min Rds On)Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsVgs(th) (Max) @ IdPower Dissipation (Max) [Max]Operating Temperature [Max]Operating Temperature [Min]Gate Charge (Qg) (Max) @ Vgs [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]
R6020ENZ4C13
Rohm Semiconductor
R6020ENZ4C13
196 mOhm
Through Hole
600 V
150 °C
MOSFET (Metal Oxide)
20 A
231 W
N-Channel
TO-247-3
20 V
TO-247
10 V
1400 pF
60 nC
LPTS
Rohm Semiconductor
R6020ENJTL
196 mOhm
Surface Mount
600 V
150 °C
MOSFET (Metal Oxide)
20 A
40 W
N-Channel
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
20 V
LPTS
10 V
1400 pF
60 nC
ROHM RBR10NS40AFHTL
Rohm Semiconductor
R6020JNJGTL
234 mOhm
Surface Mount
600 V
MOSFET (Metal Oxide)
20 A
N-Channel
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
30 V
LPTS
15 V
1500 pF
7 V
252 W
150 °C
-55 °C
45 nC
TO-220-3
Rohm Semiconductor
R6020ENX
196 mOhm
Through Hole
600 V
150 °C
MOSFET (Metal Oxide)
20 A
50 W
N-Channel
TO-220-3 Full Pack
20 V
TO-220FM
10 V
1400 pF
60 nC
R6004KNXC7G
Rohm Semiconductor
R6020FNX
250 mOhm
Through Hole
600 V
150 °C
MOSFET (Metal Oxide)
20 A
50 W
N-Channel
TO-220-3 Full Pack
30 V
TO-220FM
10 V
5 V
65 nC
2040 pF
TO-3PF
Rohm Semiconductor
R6020ENZC17
196 mOhm
Through Hole
600 V
150 °C
MOSFET (Metal Oxide)
20 A
120 W
N-Channel
TO-3P-3 Full Pack
20 V
TO-3PF
10 V
1400 pF
60 nC
TO-3PF
Rohm Semiconductor
R6020KNZC17
196 mOhm
Through Hole
600 V
150 °C
MOSFET (Metal Oxide)
20 A
68 W
N-Channel
TO-3P-3 Full Pack
20 V
TO-3PF
10 V
1550 pF
5 V
40 nC
Product dimension image
Rohm Semiconductor
R6020JNZC17
234 mOhm
Through Hole
600 V
150 °C
MOSFET (Metal Oxide)
20 A
N-Channel
TO-3P-3 Full Pack
30 V
TO-3PF
15 V
1500 pF
7 V
76 W
45 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 3.86
10$ 2.88
100$ 2.08
500$ 1.86
N/A 462$ 4.21
NewarkEach 1$ 3.93
10$ 3.11
25$ 2.92
50$ 2.45
100$ 1.98
250$ 1.82
500$ 1.65

Description

General part information

R6020 Series

R6020JNJ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).