Zenode.ai Logo
Beta
No image
Discrete Semiconductor Products

SQJ431EP-T2_GE3

Active

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
Discrete Semiconductor Products

SQJ431EP-T2_GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJ431EP-T2_GE3
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs106 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds4355 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)83 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs213 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.89
6000$ 0.85
9000$ 0.82

Description

General part information

SQJ431 Series

P-Channel 200 V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources