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PowerPak® SO-8
Discrete Semiconductor Products

SQJ431AEP-T1_GE3

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 200V 9.4A PPAK SO-8

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DocumentsDatasheet
PowerPak® SO-8
Discrete Semiconductor Products

SQJ431AEP-T1_GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET P-CH 200V 9.4A PPAK SO-8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJ431AEP-T1_GE3
Current - Continuous Drain (Id) @ 25°C9.4 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs85 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]3700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)68 W
QualificationAEC-Q101
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.57
10$ 1.31
100$ 1.04
500$ 0.88
1000$ 0.75
Digi-Reel® 1$ 1.57
10$ 1.31
100$ 1.04
500$ 0.88
1000$ 0.75
Tape & Reel (TR) 3000$ 0.71
6000$ 0.68
9000$ 0.66

Description

General part information

SQJ431 Series

P-Channel 200 V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources