
Discrete Semiconductor Products
SQJ431EP-T1_GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 12A PPAK SO-8
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Discrete Semiconductor Products
SQJ431EP-T1_GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 12A PPAK SO-8
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SQJ431EP-T1_GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 160 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 4355 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | PowerPAK® SO-8 |
| Power Dissipation (Max) | 83 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 213 mOhm |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.90 | |
| 10 | $ 1.58 | |||
| 100 | $ 1.26 | |||
| 500 | $ 1.06 | |||
| 1000 | $ 0.90 | |||
| Digi-Reel® | 1 | $ 1.90 | ||
| 10 | $ 1.58 | |||
| 100 | $ 1.26 | |||
| 500 | $ 1.06 | |||
| 1000 | $ 0.90 | |||
| Tape & Reel (TR) | 3000 | $ 0.86 | ||
| 6000 | $ 0.82 | |||
| 9000 | $ 0.80 | |||
Description
General part information
SQJ431 Series
P-Channel 200 V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Documents
Technical documentation and resources