SQJ431 Series

Catalog

MOSFET P-CH 200V 12A PPAK SO-8

Part	Grade	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Qualification	Supplier Device Package	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SQJ431EP-T1_GE3	Automotive	213 mOhm	12 A	83 W	-55 °C	175 ░C	200 V	4355 pF	3.5 V	MOSFET (Metal Oxide)	Surface Mount	6 V 10 V	PowerPAK® SO-8	AEC-Q101	PowerPAK® SO-8	P-Channel	20 V	160 nC
Vishay General Semiconductor - Diodes Division SQJ431AEP-T1_GE3	Automotive		9.4 A	68 W	-55 °C	175 ░C	200 V		3.5 V	MOSFET (Metal Oxide)	Surface Mount	6 V 10 V	PowerPAK® SO-8	AEC-Q101	PowerPAK® SO-8	P-Channel	20 V		3700 pF	85 nC
Vishay General Semiconductor - Diodes Division SQJ431EP-T2_GE3	Automotive	213 mOhm	12 A	83 W	-55 °C	175 ░C	200 V	4355 pF	3.5 V	MOSFET (Metal Oxide)	Surface Mount	6 V 10 V	PowerPAK® SO-8	AEC-Q101	PowerPAK® SO-8	P-Channel	20 V			106 nC