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STMICROELECTRONICS STGW20IH125DF
Discrete Semiconductor Products

STGW20IH125DF

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STMicroelectronics

1250 V, 20 A IH SERIES TRENCH GATE FIELD-STOP IGBT

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STMICROELECTRONICS STGW20IH125DF
Discrete Semiconductor Products

STGW20IH125DF

Active
STMicroelectronics

1250 V, 20 A IH SERIES TRENCH GATE FIELD-STOP IGBT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW20IH125DF
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)80 A
Gate Charge68 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]259 W
Supplier Device PackageTO-247
Switching Energy410 µJ
Td (on/off) @ 25°C106 ns
Td (on/off) @ 25°C-
Test Condition600 V, 10 Ohm, 15 A, 15 V
Vce(on) (Max) @ Vge, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]1250 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 571$ 3.69
Tube 1$ 2.82
30$ 2.23
120$ 1.91
510$ 1.70
1020$ 1.46
2010$ 1.37
5010$ 1.32
NewarkEach 1$ 4.67
10$ 3.79
25$ 2.90
50$ 2.71
100$ 2.51
250$ 2.23

Description

General part information

STGW20 Series

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.