Discrete Semiconductor Products

STGW20H60DF

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STMicroelectronics

IGBT, 600V, 40A, 175DEG C, 167W ROHS COMPLIANT: YES

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Discrete Semiconductor Products

STGW20H60DF

Active

STMicroelectronics

IGBT, 600V, 40A, 175DEG C, 167W ROHS COMPLIANT: YES

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW20H60DF

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	115 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	167 W
Reverse Recovery Time (trr)	90 ns
Supplier Device Package	TO-247
Switching Energy	261 µJ, 209 µJ
Td (on/off) @ 25°C [custom]	42.5 ns
Td (on/off) @ 25°C [custom]	177 ns
Test Condition	20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic [Max]	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGW20 Series

1250 V, 20 A IH series trench gate field-stop IGBT

Part	Mounting Type	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Pulsed (Icm)	Switching Energy	Test Condition	Supplier Device Package	Gate Charge	IGBT Type	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C
STMicroelectronics STGW20NC60VD	Through Hole	31 ns 100 ns	2.5 V	200 W	TO-247-3	600 V	60 A	44 ns	150 °C	-55 °C	150 A	220 µJ 330 µJ	3.3 Ohm 15 V 20 A 390 V	TO-247-3	100 nC
STMicroelectronics STGW20H60DF	Through Hole			167 W	TO-247-3	600 V	40 A	90 ns	175 °C	-55 °C	80 A	209 µJ 261 µJ	10 Ohm 15 V 20 A 400 V	TO-247	115 nC	Trench Field Stop	2 V	42.5 ns	177 ns
STMicroelectronics STGW20IH125DF	Through Hole	106 ns	2.5 V	259 W	TO-247-3	1250 V	40 A		175 °C	-55 °C	80 A	410 µJ	10 Ohm 15 A 15 V 600 V	TO-247	68 nC	Trench Field Stop				-
STMicroelectronics STGW20H65FB	Through Hole	30 ns 139 ns		168 W	TO-247-3	650 V	40 A		175 °C	-55 °C	80 A	77 µJ 170 µJ	10 Ohm 15 V 20 A 400 V	TO-247-3	120 nC	Trench Field Stop	2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	591	$ 3.04
	Tube	1	$ 3.24
		10	$ 2.11
		100	$ 1.46
		500	$ 1.19
		1000	$ 1.10
		2000	$ 1.02
		5000	$ 1.01
Newark	Each	1	$ 3.74
		10	$ 2.30
		100	$ 1.98
		500	$ 1.75
		1200	$ 1.64
		3000	$ 1.58
		5400	$ 1.57

Description

General part information

STGW20 Series

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.

STGW20H60DF

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STGW20H60DF

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Technical Specifications

STGW20 Series

Pricing

Description

STGW20 Series

Documents

Datasheet

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STGW20 Series