Discrete Semiconductor Products
STGW20NC60VD
ActiveSTMicroelectronics
IGBT, 60 A, 1.7 V, 200 W, 600 V, TO-247, 3 PINS
Discrete Semiconductor Products
STGW20NC60VD
ActiveSTMicroelectronics
IGBT, 60 A, 1.7 V, 200 W, 600 V, TO-247, 3 PINS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW20NC60VD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 100 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 200 W |
| Reverse Recovery Time (trr) | 44 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 330 µJ, 220 µJ |
| Td (on/off) @ 25°C | 31 ns, 100 ns |
| Test Condition | 15 V, 3.3 Ohm, 20 A, 390 V |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW20 Series
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
