Discrete Semiconductor Products
STGW25H120F2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H SERIES 1200 V, 25 A HIGH SPEED
Discrete Semiconductor Products
STGW25H120F2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H SERIES 1200 V, 25 A HIGH SPEED
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW25H120F2 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Gate Charge | 100 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 375 W |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 600 µJ, 700 µJ |
| Td (on/off) @ 25°C | 130 ns, 29 ns |
| Test Condition | 15 V, 10 Ohm, 25 A, 600 V |
| Vce(on) (Max) @ Vge, Ic | 2.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.69 | |
| 30 | $ 3.74 | |||
| 120 | $ 3.47 | |||
Description
General part information
STGW25M120DF3 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.