STMicroelectronics-STW6N95K5 MOSFETs Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-247 Tube

Discrete Semiconductor Products

STGW25H120DF2

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STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT, H SERIES 1200 V, 25 A HIGH SPEED

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Discrete Semiconductor Products

STGW25H120DF2

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STMicroelectronics

IGBTS TRENCH GATE FIELD-STOP IGBT, H SERIES 1200 V, 25 A HIGH SPEED

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW25H120DF2

Current - Collector (Ic) (Max) [Max]	50 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	100 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	375 W
Reverse Recovery Time (trr)	303 ns
Supplier Device Package	TO-247-3
Switching Energy	600 µJ, 700 µJ
Td (on/off) @ 25°C [custom]	29 ns
Td (on/off) @ 25°C [custom]	130 ns
Test Condition	25 A, 600 V, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

STGW25 Series

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Gate Charge	Package / Case	Power - Max [Max]	Switching Energy	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	IGBT Type	Test Condition	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
STMicroelectronics STGW25S120DF3	Through Hole	175 °C	-55 °C	265 ns	31 ns 147 ns	1200 V	2.1 V	100 A	80 nC	TO-247-3	375 W	2.37 mJ 830 µJ	TO-247-3	50 A	Trench Field Stop	15 Ohm 15 V 25 A 600 V
STMicroelectronics STGW25M120DF3	Through Hole	175 °C	-55 °C	265 ns	28 ns 150 ns	1200 V	2.3 V	100 A	85 nC	TO-247-3	375 W	1.3 mJ 850 µJ	TO-247-3	50 A	Trench Field Stop	15 Ohm 15 V 25 A 600 V
STMicroelectronics STGW25H120F2	Through Hole	175 °C	-55 °C			1200 V	2.6 V	100 A	100 nC	TO-247-3	375 W	600 µJ 700 µJ	TO-247-3	50 A	Trench Field Stop	10 Ohm 15 V 25 A 600 V	29 ns	130 ns
STMicroelectronics STGW25H120DF2	Through Hole	175 °C	-55 °C	303 ns		1200 V	2.6 V	100 A	100 nC	TO-247-3	375 W	600 µJ 700 µJ	TO-247-3	50 A	Trench Field Stop	10 Ohm 15 V 25 A 600 V	29 ns	130 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.84
		30	$ 1.82
Digikey	N/A	0	$ 4.76
	Tube	1	$ 6.05
		30	$ 4.83
		120	$ 4.32
		510	$ 3.82
		1020	$ 3.43
		2010	$ 3.22
Mouser	N/A	1	$ 4.87
		10	$ 4.81
		25	$ 2.68
		100	$ 2.26
		250	$ 1.96
		600	$ 1.85

Description

General part information

STGW25 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.