Discrete Semiconductor Products
STGW25M120DF3
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 25 A LOW LOSS
Discrete Semiconductor Products
STGW25M120DF3
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 25 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW25M120DF3 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Gate Charge | 85 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 375 W |
| Reverse Recovery Time (trr) | 265 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 1.3 mJ, 850 µJ |
| Td (on/off) @ 25°C | 150 ns |
| Td (on/off) @ 25°C | 28 ns |
| Test Condition | 15 V, 600 V, 15 Ohm, 25 A |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.53 | |
| 30 | $ 4.38 | |||
| 120 | $ 3.76 | |||
| 510 | $ 3.34 | |||
| 1020 | $ 2.86 | |||
| 2010 | $ 2.69 | |||
Description
General part information
STGW25M120DF3 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.