Discrete Semiconductor Products

SCS220AE2GC11

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SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 650 V, 20 A, 15 NC, TO-247

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DocumentsBasics of Thermal Resistance and Heat Dissipation Method for Calculating Junction Temperature from Transient Thermal Resistance Data +47

Discrete Semiconductor Products

SCS220AE2GC11

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Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 650 V, 20 A, 15 NC, TO-247

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DocumentsBasics of Thermal Resistance and Heat Dissipation Method for Calculating Junction Temperature from Transient Thermal Resistance Data +47

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Technical Specifications

Parameters and characteristics for this part

Specification	SCS220AE2GC11

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247N
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

SCS220 Series

1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Mounting Type	Supplier Device Package	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Operating Temperature - Junction	Grade	Qualification
Rohm Semiconductor SCS220AJTLL	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	1.55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263AB	500 mA
Rohm Semiconductor SCS220AE2C		650 V	200 µA	175 ░C	SiC (Silicon Carbide) Schottky		TO-247-3	Through Hole	TO-247	500 mA	10 A	1.55 V	1 Pair Common Cathode
Rohm Semiconductor SCS220AEGC11	730 pF	650 V	400 µA		SiC (Silicon Carbide) Schottky	1.55 V	TO-247-3	Through Hole	TO-247	500 mA				175 °C
Rohm Semiconductor SCS220KE2HRC11		1.2 kV	200 µA		SiC (Silicon Carbide) Schottky		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.6 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220KE2C		1.2 kV	200 µA	175 ░C	SiC (Silicon Carbide) Schottky		TO-247-3	Through Hole	TO-247	500 mA	10 A	1.6 V	1 Pair Common Cathode
Rohm Semiconductor SCS220AE2GC11		650 V	200 µA		SiC (Silicon Carbide) Schottky		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.55 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220AGHRC	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	1.55 V	TO-220-2	Through Hole	TO-220AC	500 mA					Automotive	AEC-Q101
Rohm Semiconductor SCS220AE2HRC11		650 V	200 µA		SiC (Silicon Carbide) Schottky		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.55 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220KGHRC	1060 pF	1.2 kV	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	1.6 V	TO-220-2	Through Hole	TO-220AC	500 mA					Automotive	AEC-Q101
Rohm Semiconductor SCS220AJHRTLL	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	1.55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263AB	500 mA					Automotive	AEC-Q101