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R6020ENZ4C13

Discrete Semiconductor Products

SCS220AEGC11

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Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 20 A, 31 NC, TO-247

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DocumentsAbout Flammability of Materials Calculation of Power Dissipation in Switching Circuit +47

R6020ENZ4C13

Discrete Semiconductor Products

SCS220AEGC11

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 20 A, 31 NC, TO-247

Deep-Dive with AI

DocumentsAbout Flammability of Materials Calculation of Power Dissipation in Switching Circuit +47

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCS220AEGC11

Capacitance @ Vr, F	730 pF
Current - Reverse Leakage @ Vr	400 µA
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.55 V

SCS220 Series

1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Mounting Type	Supplier Device Package	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Operating Temperature - Junction	Grade	Qualification
Rohm Semiconductor SCS220AJTLL	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	1.55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263AB	500 mA
Rohm Semiconductor SCS220AE2C		650 V	200 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247	500 mA	10 A	1.55 V	1 Pair Common Cathode
Rohm Semiconductor SCS220AEGC11	730 pF	650 V	400 µA		SiC (Silicon Carbide) Schottky	0 ns	1.55 V	TO-247-3	Through Hole	TO-247	500 mA				175 °C
Rohm Semiconductor SCS220KE2HRC11		1.2 kV	200 µA		SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.6 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220KE2C		1.2 kV	200 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247	500 mA	10 A	1.6 V	1 Pair Common Cathode
Rohm Semiconductor SCS220AE2GC11		650 V	200 µA		SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.55 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220AGHRC	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	1.55 V	TO-220-2	Through Hole	TO-220AC	500 mA					Automotive	AEC-Q101
Rohm Semiconductor SCS220AE2HRC11		650 V	200 µA		SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.55 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220KGHRC	1060 pF	1.2 kV	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	1.6 V	TO-220-2	Through Hole	TO-220AC	500 mA					Automotive	AEC-Q101
Rohm Semiconductor SCS220AJHRTLL	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	1.55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263AB	500 mA					Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	345	$ 9.91
	Tube	1	$ 8.49
		10	$ 5.84
		450	$ 4.54
Newark	Each	1	$ 9.50
		10	$ 6.53
		25	$ 6.40
		60	$ 6.26
		120	$ 6.13
		270	$ 6.12
		510	$ 4.83

Description

General part information

SCS220 Series

Switching loss reduced, enabling high-speed switching . (3-pin package)

Documents

Technical documentation and resources

About Flammability of Materials

Environmental Data

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Taping Information

Package Information

How to Create Symbols for PSpice Models

Notes for Temperature Measurement Using Thermocouples

Reliability Test Result

Manufacturing Data

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Basics of Thermal Resistance and Heat Dissipation

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Compliance of the ELV directive

Environmental Data

ESD Data

Characteristics Data

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Method for Monitoring Switching Waveform

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

What is a Thermal Model? (SiC Power Device)

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Notes for Calculating Power Consumption:Static Operation

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

How to Use Thermal Models

Inner Structure

Package Information

Condition of Soldering

Package Information

Package Dimensions

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Precautions When Measuring the Rear of the Package with a Thermocouple

PCB Layout Thermal Design Guide

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Anti-Whisker formation

Package Information

Diode Types and Applications

Technical Article

SCS220AE Data Sheet

How to Use LTspice® Models

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

Precautions for Thermal Resistance of Insulation Sheet

4 Steps for Successful Thermal Designing of Power Devices

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

What Is Thermal Design

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Package Information

About Export Administration Regulations (EAR)

Export Information

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Two-Resistor Model for Thermal Simulation

Part Explanation

Application Note

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Application Note EN