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ROHM SCS212AJHRTLL

Discrete Semiconductor Products

SCS220AJTLL

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Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 20 A, 31 NC, TO-263AB

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DocumentsTechnical Data Sheet EN TO-263AB (LPTL) Taping Spec +48

ROHM SCS212AJHRTLL

Discrete Semiconductor Products

SCS220AJTLL

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 20 A, 31 NC, TO-263AB

Deep-Dive with AI

DocumentsTechnical Data Sheet EN TO-263AB (LPTL) Taping Spec +48

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCS220AJTLL

Capacitance @ Vr, F	730 pF
Current - Reverse Leakage @ Vr	400 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263AB
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.55 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 9.23
		10	$ 7.91
		100	$ 6.59
		500	$ 5.82
	Digi-Reel®	1	$ 9.23
		10	$ 7.91
		100	$ 6.59
		500	$ 5.82
	N/A	2389	$ 10.33
	Tape & Reel (TR)	1000	$ 5.24
		2000	$ 4.91
Newark	Each	1	$ 9.30
		10	$ 6.54
		25	$ 6.06
		50	$ 5.60
		100	$ 5.12
		250	$ 5.11
		500	$ 4.99

Description

General part information

SCS220 Series

Switching loss reduced, enabling high-speed switching . (3-pin package)

Documents

Technical documentation and resources

Technical Data Sheet EN

TO-263AB (LPTL) Taping Spec

SiC Flammability

Related Document

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

Part Explanation

Application Note

ESD Data

Characteristics Data

Judgment Criteria of Thermal Evaluation

What Is Thermal Design

Inner Structure

Package Information

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

4 Steps for Successful Thermal Designing of Power Devices

Compliance of the ELV directive

Environmental Data

Package Dimensions

Package Information

Notes for Temperature Measurement Using Thermocouples

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Notes for Calculating Power Consumption:Static Operation

Anti-Whisker formation

Package Information

Precautions for Thermal Resistance of Insulation Sheet

How to Use Thermal Models

θ<sub>JA</sub> and Ψ<sub>JT</sub>

How to Use LTspice® Models

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Diode Types and Applications

Technical Article

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

Explanation for Marking

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Constitution Materials List

Environmental Data

Measurement Method and Usage of Thermal Resistance RthJC

PCB Layout Thermal Design Guide

θ<sub>JC</sub> and Ψ<sub>JT</sub>

About Export Administration Regulations (EAR)

Export Information

Basics of Thermal Resistance and Heat Dissipation

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Reliability Test Result

Manufacturing Data

Moisture Sensitivity Level

Package Information

How to Create Symbols for PSpice Models

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

What is a Thermal Model? (SiC Power Device)

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Condition of Soldering

Package Information

SCS220 Series

1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Mounting Type	Supplier Device Package	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Operating Temperature - Junction	Grade	Qualification
Rohm Semiconductor SCS220AJTLL	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	1.55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263AB	500 mA
Rohm Semiconductor SCS220AE2C		650 V	200 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247	500 mA	10 A	1.55 V	1 Pair Common Cathode
Rohm Semiconductor SCS220AEGC11	730 pF	650 V	400 µA		SiC (Silicon Carbide) Schottky	0 ns	1.55 V	TO-247-3	Through Hole	TO-247	500 mA				175 °C
Rohm Semiconductor SCS220KE2HRC11		1.2 kV	200 µA		SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.6 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220KE2C		1.2 kV	200 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247	500 mA	10 A	1.6 V	1 Pair Common Cathode
Rohm Semiconductor SCS220AE2GC11		650 V	200 µA		SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.55 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220AGHRC	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	1.55 V	TO-220-2	Through Hole	TO-220AC	500 mA					Automotive	AEC-Q101
Rohm Semiconductor SCS220AE2HRC11		650 V	200 µA		SiC (Silicon Carbide) Schottky	0 ns		TO-247-3	Through Hole	TO-247N	500 mA	10 A	1.55 V	1 Pair Common Cathode	175 °C
Rohm Semiconductor SCS220KGHRC	1060 pF	1.2 kV	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	1.6 V	TO-220-2	Through Hole	TO-220AC	500 mA					Automotive	AEC-Q101
Rohm Semiconductor SCS220AJHRTLL	730 pF	650 V	400 µA	175 ░C	SiC (Silicon Carbide) Schottky	0 ns	1.55 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263AB	500 mA					Automotive	AEC-Q101