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Technical Specifications
Parameters and characteristics for this part
| Specification | SCS220AGHRC |
|---|---|
| Capacitance @ Vr, F | 730 pF |
| Current - Reverse Leakage @ Vr | 400 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Package / Case | TO-220-2 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-220AC |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.55 V |
SCS220 Series
1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive
| Part | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Technology | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Mounting Type | Supplier Device Package | Speed | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Diode Configuration | Operating Temperature - Junction | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 730 pF | 650 V | 400 µA | 175 ░C | SiC (Silicon Carbide) Schottky | 0 ns | 1.55 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | TO-263AB | 500 mA | ||||||
Rohm Semiconductor | 650 V | 200 µA | 175 ░C | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-3 | Through Hole | TO-247 | 500 mA | 10 A | 1.55 V | 1 Pair Common Cathode | |||||
Rohm Semiconductor | 730 pF | 650 V | 400 µA | SiC (Silicon Carbide) Schottky | 0 ns | 1.55 V | TO-247-3 | Through Hole | TO-247 | 500 mA | 175 °C | ||||||
Rohm Semiconductor | 1.2 kV | 200 µA | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-3 | Through Hole | TO-247N | 500 mA | 10 A | 1.6 V | 1 Pair Common Cathode | 175 °C | |||||
Rohm Semiconductor | 1.2 kV | 200 µA | 175 ░C | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-3 | Through Hole | TO-247 | 500 mA | 10 A | 1.6 V | 1 Pair Common Cathode | |||||
Rohm Semiconductor | 650 V | 200 µA | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-3 | Through Hole | TO-247N | 500 mA | 10 A | 1.55 V | 1 Pair Common Cathode | 175 °C | |||||
Rohm Semiconductor | 730 pF | 650 V | 400 µA | 175 ░C | SiC (Silicon Carbide) Schottky | 0 ns | 1.55 V | TO-220-2 | Through Hole | TO-220AC | 500 mA | Automotive | AEC-Q101 | ||||
Rohm Semiconductor | 650 V | 200 µA | SiC (Silicon Carbide) Schottky | 0 ns | TO-247-3 | Through Hole | TO-247N | 500 mA | 10 A | 1.55 V | 1 Pair Common Cathode | 175 °C | |||||
Rohm Semiconductor | 1060 pF | 1.2 kV | 400 µA | 175 ░C | SiC (Silicon Carbide) Schottky | 0 ns | 1.6 V | TO-220-2 | Through Hole | TO-220AC | 500 mA | Automotive | AEC-Q101 | ||||
Rohm Semiconductor | 730 pF | 650 V | 400 µA | 175 ░C | SiC (Silicon Carbide) Schottky | 0 ns | 1.55 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | TO-263AB | 500 mA | Automotive | AEC-Q101 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 5.34 | |
Description
General part information
SCS220 Series
Switching loss reduced, enabling high-speed switching . (3-pin package)
Documents
Technical documentation and resources