Discrete Semiconductor Products

STGW60H65F

Obsolete

IGBT 650V 120A 360W TO247

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT 650V 120A 360W TO247

Technical Specifications

Parameters and characteristics for this part

Specification	STGW60H65F

Current - Collector (Ic) (Max) [Max]	120 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	217 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	360 W
Supplier Device Package	TO-247-3
Switching Energy	750 µJ, 1.05 mJ
Td (on/off) @ 25°C	65 ns, 180 ns
Test Condition	10 Ohm, 15 V, 400 V, 60 A
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Reverse Recovery Time (trr)	IGBT Type	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Test Condition	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Pulsed (Icm)	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Power - Max [Max]	Supplier Device Package	Td (on/off) @ 25°C
STMicroelectronics STGW60H65DFB-4	650 V	TO-247-4	60 ns	Trench Field Stop	2 V	80 A	Through Hole	10 Ohm 15 V 60 A 400 V	306 nC	175 °C	-55 °C	240 A	1.161 mJ 346 µJ	261 ns	65 ns	375 W	TO-247-4
STMicroelectronics STGW60H65F	650 V	TO-247-3		Trench Field Stop	1.9 V	120 A	Through Hole	10 Ohm 15 V 60 A 400 V	217 nC	150 °C	-55 °C	240 A	1.05 mJ 750 µJ			360 W	TO-247-3	65 ns 180 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.29

General part information

IGBT Trench Field Stop 650 V 120 A 360 W Through Hole TO-247-3

Technical documentation and resources