Discrete Semiconductor Products

STGW60H65DFB-4

Obsolete

TRANSISTOR I GBT N-CH 650V 80A 4-PIN TO-247 TUBE

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Discrete Semiconductor Products

Obsolete

TRANSISTOR I GBT N-CH 650V 80A 4-PIN TO-247 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	STGW60H65DFB-4

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	306 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power - Max [Max]	375 W
Reverse Recovery Time (trr)	60 ns
Supplier Device Package	TO-247-4
Switching Energy	1.161 mJ, 346 µJ
Td (on/off) @ 25°C [custom]	261 ns
Td (on/off) @ 25°C [custom]	65 ns
Test Condition	10 Ohm, 15 V, 400 V, 60 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Reverse Recovery Time (trr)	IGBT Type	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Test Condition	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Pulsed (Icm)	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Power - Max [Max]	Supplier Device Package	Td (on/off) @ 25°C
STMicroelectronics STGW60H65DFB-4	650 V	TO-247-4	60 ns	Trench Field Stop	2 V	80 A	Through Hole	10 Ohm 15 V 60 A 400 V	306 nC	175 °C	-55 °C	240 A	1.161 mJ 346 µJ	261 ns	65 ns	375 W	TO-247-4
STMicroelectronics STGW60H65F	650 V	TO-247-3		Trench Field Stop	1.9 V	120 A	Through Hole	10 Ohm 15 V 60 A 400 V	217 nC	150 °C	-55 °C	240 A	1.05 mJ 750 µJ			360 W	TO-247-3	65 ns 180 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-4

Technical documentation and resources