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8-PQFN
Discrete Semiconductor Products

FDMS7678

Active
ON Semiconductor

N-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET 30V, 26A, 5.5MΩ

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8-PQFN
Discrete Semiconductor Products

FDMS7678

Active
ON Semiconductor

N-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET 30V, 26A, 5.5MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS7678
Current - Continuous Drain (Id) @ 25°C17.5 A
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]39 nC
Input Capacitance (Ciss) (Max) @ Vds2410 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.3 W, 41 W
Rds On (Max) @ Id, Vgs5.5 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.29
10$ 0.81
100$ 0.54
500$ 0.42
1000$ 0.38
Digi-Reel® 1$ 1.29
10$ 0.81
100$ 0.54
500$ 0.42
1000$ 0.38
Tape & Reel (TR) 3000$ 0.30
NewarkEach (Supplied on Full Reel) 3000$ 0.40
6000$ 0.37
12000$ 0.34
18000$ 0.32
30000$ 0.30
ON SemiconductorN/A 1$ 0.27

Description

General part information

FDMS7692A Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.