Specification	FDMS7682

Current - Continuous Drain (Id) @ 25°C	22 A, 16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1885 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	33 W, 2.5 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS7692A Series

N-Channel Power Trench<sup>®</sup> MOSFET 30V, 26A, 5.5mΩ

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Configuration	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMS7698	30 V	-55 °C	150 °C	1605 pF	3 V	2.5 W 29 W	4.5 V 10 V	N-Channel	10 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 22 A	24 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7606	30 V			1400 pF	3 V				11.4 mOhm	Power56	MOSFET (Metal Oxide)			8-PowerWDFN		Surface Mount	22 nC	Logic Level Gate	2 N-Channel (Dual)	1 W	11.5 A	12 A
ON Semiconductor FDMS7682	30 V	-55 °C	150 °C	1885 pF	3 V	2.5 W 33 W	4.5 V 10 V	N-Channel	6.3 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	16 A 22 A		8-PowerTDFN	20 V	Surface Mount	30 nC
ON Semiconductor FDMS7692	30 V	-55 °C	150 °C	1350 pF	3 V	2.5 W 27 W	4.5 V 10 V	N-Channel	7.5 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	14 A 28 A	22 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7672AS	30 V	-55 °C	150 °C	2820 pF	3 V	2.5 W 46 W	4.5 V 10 V	N-Channel	4 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	19 A 42 A		8-PowerTDFN	20 V	Surface Mount	46 nC
ON Semiconductor FDMS7692A	30 V	-55 °C	150 °C	1350 pF	3 V	2.5 W 27 W	4.5 V 10 V	N-Channel	8 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 28 A	22 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7672	30 V	-55 °C	150 °C	2960 pF	3 V	2.5 W 48 W	4.5 V 10 V	N-Channel		8-PQFN (5x6)	MOSFET (Metal Oxide)		44 nC	8-PowerTDFN	20 V	Surface Mount							5 mOhm
ON Semiconductor FDMS7678	30 V	-55 °C	150 °C	2410 pF	3 V	2.3 W 41 W	4.5 V 10 V	N-Channel	5.5 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	17.5 A	39 nC	8-PowerTDFN	20 V	Surface Mount								26 A
ON Semiconductor FDMS7698	30 V	-55 °C	150 °C	1605 pF	3 V	2.5 W 29 W	4.5 V 10 V	N-Channel	10 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 22 A	24 nC	8-PowerTDFN	20 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.10
		10	$ 0.69
		100	$ 0.45
		500	$ 0.35
		1000	$ 0.32
	Digi-Reel®	1	$ 1.10
		10	$ 0.69
		100	$ 0.45
		500	$ 0.35
		1000	$ 0.32
	Tape & Reel (TR)	3000	$ 0.24
		6000	$ 0.24
Newark	Each (Supplied on Full Reel)	3000	$ 0.32
		6000	$ 0.30
		12000	$ 0.28
		18000	$ 0.26
		30000	$ 0.25
ON Semiconductor	N/A	1	$ 0.22

Description

General part information

FDMS7692A Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.