Discrete Semiconductor Products

FDMS7606

Obsolete

ON Semiconductor

MOSFET 2N-CH 30V 11.5A POWER56

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Discrete Semiconductor Products

FDMS7606

Obsolete

ON Semiconductor

MOSFET 2N-CH 30V 11.5A POWER56

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS7606

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	12 A
Current - Continuous Drain (Id) @ 25°C [Min]	11.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	11.4 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMS7692A Series

N-Channel Power Trench<sup>®</sup> MOSFET 30V, 26A, 5.5mΩ

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Configuration	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMS7698	30 V	-55 °C	150 °C	1605 pF	3 V	2.5 W 29 W	4.5 V 10 V	N-Channel	10 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 22 A	24 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7606	30 V			1400 pF	3 V				11.4 mOhm	Power56	MOSFET (Metal Oxide)			8-PowerWDFN		Surface Mount	22 nC	Logic Level Gate	2 N-Channel (Dual)	1 W	11.5 A	12 A
ON Semiconductor FDMS7682	30 V	-55 °C	150 °C	1885 pF	3 V	2.5 W 33 W	4.5 V 10 V	N-Channel	6.3 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	16 A 22 A		8-PowerTDFN	20 V	Surface Mount	30 nC
ON Semiconductor FDMS7692	30 V	-55 °C	150 °C	1350 pF	3 V	2.5 W 27 W	4.5 V 10 V	N-Channel	7.5 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	14 A 28 A	22 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7672AS	30 V	-55 °C	150 °C	2820 pF	3 V	2.5 W 46 W	4.5 V 10 V	N-Channel	4 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	19 A 42 A		8-PowerTDFN	20 V	Surface Mount	46 nC
ON Semiconductor FDMS7692A	30 V	-55 °C	150 °C	1350 pF	3 V	2.5 W 27 W	4.5 V 10 V	N-Channel	8 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 28 A	22 nC	8-PowerTDFN	20 V	Surface Mount
ON Semiconductor FDMS7672	30 V	-55 °C	150 °C	2960 pF	3 V	2.5 W 48 W	4.5 V 10 V	N-Channel		8-PQFN (5x6)	MOSFET (Metal Oxide)		44 nC	8-PowerTDFN	20 V	Surface Mount							5 mOhm
ON Semiconductor FDMS7678	30 V	-55 °C	150 °C	2410 pF	3 V	2.3 W 41 W	4.5 V 10 V	N-Channel	5.5 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	17.5 A	39 nC	8-PowerTDFN	20 V	Surface Mount								26 A
ON Semiconductor FDMS7698	30 V	-55 °C	150 °C	1605 pF	3 V	2.5 W 29 W	4.5 V 10 V	N-Channel	10 mOhm	8-PQFN (5x6)	MOSFET (Metal Oxide)	13.5 A 22 A	24 nC	8-PowerTDFN	20 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	251	$ 1.20

Description

General part information

FDMS7692A Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Documents

Technical documentation and resources

No documents available