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TO-252AA
Discrete Semiconductor Products

FDD86102LZ

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.0178 OHM, TO-252 (DPAK), SURFACE MOUNT

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TO-252AA
Discrete Semiconductor Products

FDD86102LZ

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 42 A, 0.0178 OHM, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD86102LZ
Current - Continuous Drain (Id) @ 25°C8 A, 35 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)3.1 W, 54 W
Rds On (Max) @ Id, Vgs22.5 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.55
10$ 1.28
100$ 1.02
500$ 0.86
1000$ 0.73
Digi-Reel® 1$ 1.55
10$ 1.28
100$ 1.02
500$ 0.86
1000$ 0.73
Tape & Reel (TR) 2500$ 0.70
5000$ 0.67
12500$ 0.65
NewarkEach (Supplied on Cut Tape) 1$ 2.03
10$ 1.59
25$ 1.50
50$ 1.40
ON SemiconductorN/A 1$ 0.54

Description

General part information

FDD86102LZ Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.